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ATP207
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
min
Ratings
typ
max
Unit
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
V(BR)DSS
IDSS
IGSS
ID=1mA, VGS=0V
VDS= 40 V, VGS=0V
VGS=±16V, VDS=0V
40
1
±10
V
μ A
μ A
Cutoff Voltage
Forward Transfer Admittance
VGS(off)
| yfs |
VDS=10V, ID=1mA
VDS=10V, ID= 33 A
1.5
12
20
2.6
V
S
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID= 33 A, VGS=10V
ID= 17 A, VGS=4.5V
VDS=20V, f=1MHz
See speci ? ed Test Circuit.
VDS=20V, VGS=10V, ID=65A
IS=65A, VGS=0V
7
11
2710
330
220
27
290
170
110
54
14
11
1.0
9.1
15.5
1.2
m Ω
m Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Switching Time Test Circuit
10V
0V
VIN
VIN
VDD=20V
ID=33A
RL=0.61 Ω
PW=10 μ s
D.C. ≤ 1%
D
VOUT
G
ATP207
P.G
50 Ω
S
Ordering Information
Device
ATP207-TL-H
Package
ATPAK
Shipping
3,000pcs./reel
memo
Pb Free and Halogen Free
No. A1319-2/7
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